High charge rate, large capacity, solid-state battery

ABSTRACT

Solid-state battery structures, particularly solid-state lithium-based battery structures, which are fast charging and have a high capacity are provided. Notably, fast charging, high capacity solid-state battery structures are provided that include a plurality of solid-state-thin-film batteries that are stacked one atop the other, or that include an array of interconnected solid-state thin-film batteries, or that contain a solid-state thin-film battery located on physically exposed surfaces of fin structures.

BACKGROUND

The present application relates to solid-state thin-film batterytechnology. More particularly, the present application relates to fastcharging, high capacity, solid-state battery structures, and methods offorming the same.

In recent years, there has been an increased demand for portableelectronic devices such as, for example, computers, mobile phones,tracking systems, scanners, medical devices, smart watches, and fitnessdevices. One drawback with portable electronic devices is the need toinclude a power supply within the device itself. Typically, a battery isused as the power supply of such portable electronic devices. Batteriesmust have sufficient capacity to power the portable electronic devicefor at least the length that the device is being used. Sufficientbattery capacity can result in a power supply that is quite heavy and/orlarge compared to the rest of the portable electronic device. As such,smaller sized and lighter weight power supplies with sufficient energystorage are desired. Such power supplies can be implemented in smallerand lighter weight portable electronic devices.

Another drawback of conventional batteries is that some of the batteriescontain potentially flammable and toxic materials that may leak and maybe subject to governmental regulations. As such, it is desired toprovide an electrical power supply that is safe, solid-state andrechargeable over many charge/discharge life cycles.

One type of an energy-storage device that is small and light weight,contains non-toxic materials and that can be recharged over manycharge/discharge cycles is a solid-state, lithium-based battery.Lithium-based batteries are rechargeable batteries that include twoelectrodes implementing lithium.

The charging speed of solid-state, lithium-based batteries is oftenlimited and is typically below 3 C, wherein C is the total batterycapacity per hour. Some factors that may contribute to the limitedcharging speed of solid-state, lithium-based batteries is the presenceof a high resistive cathode material such as, for example, LiCoO₂,within the battery cell material stack, the high interfacial energy thatcan exist between metallic lithium and the top electrode, andmetallic-lithium dendrite formation under large voltage bias.

There is thus a need for providing solid-state battery structures, suchas lithium-based battery structures, that are fast charging, yet have ahigh capacity.

SUMMARY

The present application provides solid-state battery structures,particularly solid-state lithium-based battery structures, which arefast charging and have a high capacity. Notably, fast charging, highcapacity solid-state battery structures are provided that include aplurality of solid-state thin-film batteries that are stacked one atopthe other, or that include an array of interconnected solid-statethin-film batteries, or that contain a solid-state thin-film batterylocated on physically exposed surfaces of fin (i.e., pillar) structures.

The term “thin-film battery” is used throughout the present applicationto denote a battery whose thickness is 100 μm or less. Such thin-filmbatteries are small and light weight, and thus can be implemented inmany different types of portable electronic devices. The term“solid-state” denotes a battery in which all the battery components,including the electrolyte, are solid materials. The term “fast charging”denotes a battery that has a charge rate of 3 C or greater, wherein C isthe total battery capacity per hour. The “term “high capacity” denotes abattery having a capacity of 1 Amps hour or greater.

In one aspect of the present application, a solid-state batterystructure is provided that is fast charging and has a high capacity. Inone embodiment, the solid-state battery structure includes a pluralityof solid-state thin-film battery sub-sheets vertically stacked one atopthe other. A plurality of fuse elements is located in proximity to theplurality of solid-state thin-film battery sub-sheets. Each solid-statethin-film battery sub-sheet of the plurality of solid-state thin-filmbattery sub-sheets is connected to one fuse element, and the fuseelements of the plurality of fuse elements are configured to be inparallel with one another.

In another embodiment, the solid-state battery structure includes anarray of solid-state thin-film batteries located on a surface of asubstrate, each solid-state thin-film battery of the array ofsolid-state thin-film batteries comprises a bottom electrode, a batterycell material stack and a top electrode. A fuse element is in proximityto each solid-state thin-film battery of the plurality of solid-statethin-film batteries. Each fuse element of the plurality of fuse elementshas a first end connected to the bottom electrode of one of thesolid-state thin-film batteries and a second end connected to a firstbus bar. The first bus bars are located on the substrate. At least onesecond bus bar is located above, and spaced apart from, each first busbar, wherein the at least one second bus bar contacts a surface of thetop electrode of each solid-state thin-film battery.

In some embodiments, additional arrays of solid-state thin-filmbatteries can be stacked one atop the other. In one example, asolid-state battery structure is provided that includes a first batterylevel comprising an array of solid-state thin-film batteries located ona surface of a substrate and a fuse element in proximity to eachsolid-state thin-film battery of the plurality of solid-state thin-filmbatteries in the first battery level, wherein each fuse element in thefirst battery level has a first end connected to a bottom electrode ofone of the solid-state thin-film batteries in the first battery leveland a second end connected to a first bus bar present in the firstbattery level, wherein the first bus bars present in the first batterylevel are located on the substrate. At least one second bus bar islocated above, and spaced apart from, each first bus bar that is presentin the first battery level. The at least one second bus bar contacts asurface of a top electrode of each solid-state thin-film battery in thefirst battery level. A second battery level comprising an array ofsolid-state thin-film batteries is located above the at least one secondbus bar.

In yet another embodiment, the solid-state battery structure includes aplurality of substrate layers and dielectric material layers stacked oneatop the other, wherein each dielectric material layer includes asolid-state thin-film battery located therein, wherein each solid-statethin-film battery comprises at least a bottom electrode, a cathode, asolid-state electrolyte, and a top electrode. A first via-filled contactstructure interconnects each bottom electrode together, and a secondvia-filled contact structure interconnects each top electrode together.

In an even further embodiment, the solid-state battery structureincludes at least one fin structure extending upwards from a basesubstrate. A solid-state thin-film battery structure is located onphysically exposed surfaces of the at least one fin structure and onphysically exposed surfaces of the base substrate.

In another aspect of the present application, a method of forming asolid-state battery structure that is fast charging and has a highcapacity is provided. In one embodiment, the method includes providing abattery sheet containing a solid-state thin-film battery structure on asubstrate. Next, the battery sheet is diced into individual batterysub-sheets, and thereafter, the individual battery sub-sheets arestacked one atop the other. A fuse element is then provided to eachbattery sub-sheet, wherein the fuse elements of the plurality of fuseelements are configured to be in parallel with one another.

In another embodiment, the method includes providing an array ofsolid-state thin-film batteries on a surface of a substrate, whereineach solid-state thin-film battery of the array of solid-state thin-filmbatteries comprises a bottom electrode, a battery cell material stackand a top electrode. Next, a fuse element is formed in proximity to eachsolid-state thin-film battery of the plurality of solid-state thin-filmbatteries. Each fuse element has a first end connected to the bottomelectrode of one of the solid-state thin-film batteries and a second endconnected to a first bus bar. The first bus bars are located on thesubstrate. At least one second bus bar is formed above, and spaced apartfrom each first bus bar, wherein the at least one second bus barcontacts a surface of the top electrode of each solid-state thin-filmbattery. In some embodiments, additional arrays of solid-stage thin-filmbatteries can be formed atop the array described above.

In yet a further embodiment, the method includes forming a plurality ofsubstrate layers and dielectric material layers stacked one atop theother, wherein each dielectric material layer includes a solid-statethin-film battery located therein, wherein each solid-state thin-filmbattery comprises at least a bottom electrode, a cathode, a solid-stateelectrolyte, and a top electrode. A first via-filled contact structureand a second via-filled contact structure are formed. The firstvia-filled contact structure interconnects each bottom electrodetogether, while the second via-filled contact structure interconnectseach top electrode together.

In an even further embodiment, the method includes providing at leastone fin structure extending upwards from a base substrate. Next, asolid-state thin-film battery structure is formed on physically exposedsurfaces of the at least one fin structure and on physically exposedsurfaces of the base substrate.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a pictorial represents of an exemplary solid-state thin-filmbattery sheet of a battery structure located on a substrate that can beemployed in the present application.

FIG. 2 is a cross view of an exemplary solid-state thin-film batterystructure that can be used in the solid-state thin-film battery sheet ofFIG. 1.

FIG. 3 is a pictorial representation of the exemplary solid-statethin-film battery sheet of FIG. 1 after cutting the battery sheet intoindividual solid-state thin-film battery sub-sheets and thereafterstacking the individual solid-state thin-film battery sub-sheets oneatop the other.

FIG. 4 is a pictorial representation of the stacked battery sub-sheetstructure of FIG. 3 after providing a fuse element to each solid-statethin-film battery sub-sheet, and connecting the same to a load.

FIG. 5A is a cross sectional view of an array layout containing aplurality of solid-state thin-film batteries in accordance with anembodiment of the present application.

FIG. 5B is a top down view of the array layout shown in FIG. 5A prior toforming a dielectric structure and at least one second bus bar.

FIG. 6 is a cross sectional view of another array layout including aplurality of battery levels containing arrays of solid-state thin-filmbatteries stacked one atop the other.

FIG. 7 is a cross sectional view of another solid-state batterystructure of the present application.

FIG. 8 is a cross sectional view of yet another solid-state batterystructure of the present application.

DETAILED DESCRIPTION

The present application will now be described in greater detail byreferring to the following discussion and drawings that accompany thepresent application. It is noted that the drawings of the presentapplication are provided for illustrative purposes only and, as such,the drawings are not drawn to scale. It is also noted that like andcorresponding elements are referred to by like reference numerals.

In the following description, numerous specific details are set forth,such as particular structures, components, materials, dimensions,processing steps and techniques, in order to provide an understanding ofthe various embodiments of the present application. However, it will beappreciated by one of ordinary skill in the art that the variousembodiments of the present application may be practiced without thesespecific details. In other instances, well-known structures orprocessing steps have not been described in detail in order to avoidobscuring the present application.

It will be understood that when an element as a layer, region orsubstrate is referred to as being “on” or “over” another element, it canbe directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “beneath” or “under” another element, it can bedirectly beneath or under the other element, or intervening elements maybe present. In contrast, when an element is referred to as being“directly beneath” or “directly under” another element, there are nointervening elements present.

Referring first to FIG. 1, there is illustrated an exemplary solid-statethin-film battery sheet of a solid-state thin-film battery structure 12located on a substrate 10 that can be employed in the presentapplication. As is shown, the solid-state thin-film battery structure 12is continuously (without any breaks or gaps) present on the entirety ofthe substrate 10. In FIG. 1, the dotted lines represent locations inwhich subsequent cutting of the exemplary solid-state thin-film batterysheet (10, 12) will be performed.

The substrate 10 that can be employed in the present applicationincludes any conventional material that is used as a substrate for asolid-state thin-film battery. In one embodiment, the substrate 10 mayinclude one or more semiconductor materials. The term “semiconductormaterial” is used throughout the present application to denote amaterial having semiconducting properties.

Examples of semiconductor materials that may be employed as substrate 10include silicon (Si), germanium (Ge), silicon germanium alloys (SiGe),silicon carbide (SiC), silicon germanium carbide (SiGeC), III-V compoundsemiconductors or II-VI compound semiconductors. III-V compoundsemiconductors are materials that include at least one element fromGroup III of the Periodic Table of Elements and at least one elementfrom Group V of the Periodic Table of Elements. II-VI compoundsemiconductors are materials that include at least one element fromGroup II of the Periodic Table of Elements and at least one element fromGroup VI of the Periodic Table of Elements.

In one embodiment, the semiconductor material that may provide substrate10 is a bulk semiconductor substrate. By “bulk” it is meant that thesubstrate 10 is entirely composed of at least one semiconductormaterial, as defined above. In one example, the substrate 10 may beentirely composed of silicon. In some embodiments, the bulksemiconductor substrate may include a multilayered semiconductormaterial stack including at least two different semiconductor materials,as defined above. In one example, the multilayered semiconductormaterial stack may comprise, in any order, a stack of Si and a silicongermanium alloy.

In another embodiment, substrate 10 is composed of a topmostsemiconductor material layer of a semiconductor-on-insulator (SOI)substrate. The SOI substrate would also include a handle substrate (notshown) including one of the above mentioned semiconductor materials, andan insulator layer (not shown) such as a buried oxide below the topmostsemiconductor material layer.

In any of the embodiments mentioned above, the semiconductor materialthat may provide the substrate 10 may be a single crystallinesemiconductor material. The semiconductor material that may provide thesubstrate 10 may have any of the well known crystal orientations. Forexample, the crystal orientation of the semiconductor material that mayprovide substrate 10 may be {100}, {110}, or {111}. Othercrystallographic orientations besides those specifically mentioned canalso be used in the present application.

In yet another embodiment, the substrate 10 is a dielectric materialsuch as, for example, doped or non-doped silicate glass, silicondioxide, or silicon nitride. In yet a further embodiment, the substrate10 is composed of a polymer or flexible substrate material such as, forexample, a polyimide, a polyether ketone (PEEK) or a transparentconductive polyester. In yet an even further embodiment, the substrate10 may be composed of a multilayered stack of at least two of the abovementioned substrate materials, e.g., a stack of silicon and silicondioxide.

The substrate 10 that can be used in the present application can have athickness from 10 μm to 5 mm. Other thicknesses that are lesser than, orgreater than, the aforementioned thickness values may also be used forsubstrate 10.

In some embodiments, the substrate 10 may have a non-textured (flat orplanar) surface. The term “non-textured surface” denotes a surface thatis smooth and has a surface roughness on the order of less than 100 nmroot mean square as measured by profilometry. In yet another embodiment,the substrate 10 may have a textured surface. In such an embodiment, thesurface roughness of the textured substrate can be in a range from 100nm root mean square to 100 μm root mean square as also measured byprofilometry. Texturing can be performed by forming a plurality ofetching masks (e.g., metal, insulator, or polymer) on the surface of anon-textured substrate, etching the non-textured substrate utilizing theplurality of masks as an etch mask, and removing the etch masks from thenon-textured surface of the substrate. In some embodiments, the texturedsurface of the substrate is composed of a plurality of pyramids. In yetanother embodiment, the textured surface of the substrate is composed ofa plurality of cones. In some embodiments, a plurality of metallic masksare used, which may be formed by depositing a layer of a metallicmaterial and then performing an anneal. During the anneal, the layer ofmetallic material melts and balls-ups such that de-wetting of thesurface of the substrate occurs. Details concerning the use of metallicmasks in texturing a surface of a substrate can be found in co-pendingand co-assigned U.S. patent application Ser. No. 15/474,434, filed onMar. 30, 2017, the entire content of which is incorporated herein byreference.

The solid-state thin-film battery structure 12 includes solid-statethin-film battery materials which can be formed one atop the other onsubstrate 10 utilizing conventional deposition processes well known tothose skilled in the art. Notably, the solid-state thin-film batterystructure 12 comprises a bottom electrode, a cathode layer, asolid-state electrolyte layer and a top electrode. In some embodiments,the battery structure 12 may further include an anode region locatedbetween the solid-state electrolyte layer and the top electrode. Theanode region may or may not be continuously present between thesolid-state electrolyte layer and the top electrode. The anode regionmay be a deposited anode material, or it may be generated during acharging/recharging process. In a further embodiment, the solid-statethin-film battery structure 12 may even further include a liner locatedbetween the solid-state electrolyte layer and the anode region.Collectively, the material layers of the solid-state thin-film batterystructure 12 located between the bottom electrode and the top electrodedefine a battery cell material stack.

An exemplary solid-state thin-film battery structure 12 that can beemployed is shown in FIG. 2. In one embodiment, the solid-statethin-film battery structure 12 shown in FIG. 2 is a solid-statethin-film lithium-based battery. Although a solid-state thin-filmlithium-based battery is exemplified herein as the solid-state thin-filmbattery structure 12, other types of solid-state thin-film batterystructures can be employed in the present application. Although FIG. 2discloses the anode region 22 being located above the cathode layer 16,one skilled in the art would appreciate that the anode region 22 may belocated beneath the cathode layer 16 by flipping the orientation of thesolid-state thin-film battery structure shown in FIG. 2.

The solid-state thin-film battery structure 12 shown in FIG. 2 includesa bottom electrode 14, a cathode layer 16, a solid-state electrolytelayer 18, an optional liner 20, an anode region 22 and a top electrode24. As stated above, the anode region 22 may be a deposited anodematerial, or it may be generated during a charging/recharging process.Collectively, the cathode layer 16, the solid-state electrolyte layer18, the optional liner 20, and the anode region 22 may be referred to asa battery cell material stack 13.

The bottom electrode 14 of the solid-state thin-film battery structure12 illustrated in FIG. 2 may include any metallic electrode materialsuch as, for example, titanium (Ti), platinum (Pt), nickel (Ni),aluminum (Al) or titanium nitride (TiN). In one example, the bottomelectrode 14 includes a stack of, from bottom to top, titanium (Ti),platinum (Pt) and titanium (Ti). The bottom electrode 14 may be formedutilizing a deposition process including, for example, chemical vapordeposition (CVD), plasma enhanced chemical vapor deposition (PECVD),evaporation, sputtering, or plating. The bottom electrode 14 may have athickness from 10 nm to 500 nm. Other thicknesses that are lesser than,or greater than, the aforementioned thickness values may also be usedfor the bottom electrode 14.

The cathode layer 16 of the solid-state thin-film battery structure 12illustrated in FIG. 2 may include a lithiated material such as, forexample, a lithium-based mixed oxide. Hence, the cathode layer 16illustrated in FIG. 2 may be referred to as a lithiated cathode materiallayer. Examples of lithium-based mixed oxides that may be employed asthe cathode layer 16 include, but are not limited to, lithium cobaltoxide (LiCoO₂), lithium nickel oxide (LiNiO₂), lithium manganese oxide(LiMn₂O₄), lithium vanadium pentoxide (LiV₂O₅) or lithium iron phosphate(LiFePO₄). The cathode layer 16 illustrated in FIG. 2 may have athickness from 10 nm to 20 μm. Other thicknesses that are lesser than,or greater than, the aforementioned thickness values may also be usedfor cathode layer 16 of the solid-state thin-film battery structure 12.

The cathode layer 16 of the solid-state thin-film battery structure 12illustrated in FIG. 2 may be formed utilizing a deposition process suchas, sputtering or plating. In one embodiment, the cathode layer 16 isformed by sputtering utilizing any conventional precursor sourcematerial or combination of precursor source materials. In one example, alithium precursor source material and a cobalt precursor source materialare employed in forming a lithium cobalt mixed oxide. Sputtering may beperformed in an admixture of an inert gas and oxygen. In such anembodiment, the oxygen content of the inert gas/oxygen admixture can befrom 0.1 atomic percent to 70 atomic percent, the remainder of theadmixture includes the inert gas. Examples of inert gases that may beused include argon, helium, neon, nitrogen or any combination thereof.

The solid-state electrolyte layer 18 of the solid-state thin-filmbattery structure 12 illustrated in FIG. 2 includes a material thatenables the conduction of lithium ions; the solid-state electrolytelayer 18 may be referred to as a lithium-based solid-state electrolytelayer. Such materials may be electrically insulating or ionicconducting. Examples of materials that can be employed as thesolid-state electrolyte layer 18 include, but are not limited to,lithium phosphorus oxynitride (LiPON) or lithium phosphosilicateoxynitride (LiSiPON).

The solid-state electrolyte layer 18 may be formed utilizing adeposition process such as, sputtering or plating. In one embodiment,the solid-state electrolyte layer 18 of the lithium-based battery stackis formed by sputtering utilizing any conventional precursor sourcematerial. Sputtering may be performed in the presence of at least anitrogen-containing ambient. Examples of nitrogen-containing ambientsthat can be employed include, but are not limited to, N₂, NH₃, NH₄, NO,or NH_(x) wherein x is between 0 and 1. Mixtures of the aforementionednitrogen-containing ambients can also be employed. In some embodiments,the nitrogen-containing ambient is used neat, i.e., non-diluted. Inother embodiments, the nitrogen-containing ambient can be diluted withan inert gas such as, for example, helium (He), neon (Ne), argon (Ar)and mixtures thereof. The content of nitrogen (N₂) within thenitrogen-containing ambient employed is typically from 10% to 100%, witha nitrogen content within the ambient from 50% to 100% being moretypical.

The solid-state electrolyte layer 18 of the battery structure 12illustrated in FIG. 2 may have a thickness from 10 nm to 10 μm. Otherthicknesses that are lesser than, or greater than, the aforementionedthickness values may also be used for the solid-state electrolyte layer18.

The liner 20 that may be present in the solid-state thin-film batterystructure 12 illustrated in FIG. 2 is a continuous layer that covers theentirety of the solid-state electrolyte layer 18; in some embodimentsthe liner 20 is omitted. In one embodiment, the liner is a lithiumnucleation enhancement liner. In such an embodiment, the lithiumnucleation enhancement liner includes a material that can facilitate thesubsequent nucleation of lithium upon performing a charging/rechargingprocess. In one embodiment, lithium nucleation enhancement liner thatcan be used as liner 20 is composed of gold (Au), silver (Ag), zinc(Zn), magnesium (Mg), tantalum (Ta), tungsten (W), molybdenum (Mo), atitanium-zirconium-molybdenum alloy (TZM), or silicon (Si). Detaileddescription of lithium nucleation enhancement liners can be found inco-pending and co-assigned U.S. patent application Ser. No. 15/474,668,filed Mar. 30, 2017, the entire content of which is incorporated hereinby reference. In another embodiment, liner 20 is a barrier material suchas, for example, LiF.

The liner 20 can be formed utilizing a deposition process. Examples ofdeposition processes than can be used in forming the liner 24 includechemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD), evaporation, sputtering or plating. The liner 20typically has a thickness that is greater than 1 nm. In one embodimentand when employed, the liner 20 has a thickness from 2 nm to 20 nm.

The anode region 22 of the solid-state thin-film battery structure 12illustrated in FIG. 2 includes any material that is a lithium iongenerator or lithium intercalation active material. Examples ofmaterials that may be used as anode region 22 include, but are notlimited to, lithium metal, a lithium-base alloy such as, for example,Li_(x)Si, or a lithium-based mixed oxide such as, for example, lithiumtitanium oxide (Li₂TiO₃). The anode region 22 may be a continuous layeror it may be composed of a plurality of non-continuous regions.

In some embodiments, the anode region 22 is formed prior to performing acharging/recharging process. In such an embodiment, the anode region 22can be formed utilizing a deposition processes such as, for example,chemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD), evaporation, sputtering or plating. In otherembodiments, the anode region 22 is a lithium accumulation region thatis formed during a charging/recharging process.

The top electrode 24 of the solid-state thin-film battery structure 12illustrated in FIG. 2 may include any metallic electrode material suchas, for example, titanium (Ti), platinum (Pt), nickel (Ni), copper (Cu)or titanium nitride (TiN). In one example, the top electrode 24 includesa stack of, from bottom to top, nickel (Ni) and copper (Cu). In oneembodiment, the metallic electrode material that provides the topelectrode 24 may be the same as the metallic electrode material thatprovides the bottom electrode 14. In another embodiment, the metallicelectrode material that provides the top electrode 24 may be differentfrom the metallic electrode material that provides the bottom electrode14. The top electrode 24 may be formed utilizing one of the depositionprocesses mentioned above for forming the bottom electrode 14. The topelectrode 24 may have a thickness within the range mentioned above forthe bottom electrode 14. In the present application, top electrode 24may be referred to as an anode-side electrode, while bottom electrode 12may be referred to as a cathode-side electrode.

Referring now to FIG. 3, there is illustrated the exemplary solid-statethin-film battery sheet of FIG. 1 after cutting the battery sheet (10,12) into individual solid-state thin-film battery sub-sheets (10P, 12P)and thereafter stacking the individual solid-state thin-film batterysub-sheets (10P, 12P) one atop the other to provide a vertically stackedsolid-state battery structure. In the present application, element 10Pdenotes a substrate material portion, while element 12P denotes asolid-state thin-film battery structure portion. Each solid-statethin-film battery structure portion 12P includes a remaining portion ofthe bottom electrode 12, a remaining portion of the battery cellmaterial stack 13, and a remaining portion of the top electrode 24. Inthe illustrated embodiment, cutting is performed along the dotted linesshown in FIG. 1.

The number of individual solid-state thin-film battery sub-sheets (10P,12P) that can be present in the vertically stacked solid-state batterystructure may vary and is not limited to 3 solid-state thin-film batterysub-sheets (10P, 12P) as shown in FIG. 3. For example, 10, 20, 30, 40,etc. battery sub-sheets (10P, 12P) may be stacked one atop the other.

The size (i.e., length and width) of each individual solid-statethin-film battery sub-sheet (10P, 12P) may be determined by the defectdensity of the battery sheet. In one example, the length of eachindividual solid-state thin-film battery sub-sheet (10P, 12P) may befrom 100 nm 1 meter, while the width may be from 100 nm to 1 meter.Other lengths and widths may also be used in the present application foreach solid-state thin-film battery sub-sheet (10P, 12P). Upon stacking,which may be performed by hand or by mechanical means such as a robotarm, and as is shown, the sidewall surfaces of each individualsolid-state thin-film battery sub-sheet (10P, 12P) are verticallyaligned to each other.

Cutting may be performed utilizing techniques that are well known tothose skilled in the art. In one example, the cutting process mayinclude dicing. In another example, the cutting process may includesawing.

Referring now to FIG. 4, there is illustrated the vertically stackedsolid-state battery structure of FIG. 3 after providing a fuse element26 to each solid-state thin-film battery sub-sheet (10P, 12P), andconnecting the same to a load 28. Each fuse element 26 is in proximityto one of the solid-state thin-film battery sub-sheets (10P, 12P).Collectively, the fuse elements 26 are configured to be in parallel withone another. That is, the fuse elements 26 are arranged so as to providea same voltage potential to each solid-state thin-film battery sub-sheet(10P, 12P).

The fuse elements 26 may include a metal or metal alloy that melts whenthe device is shunted and current is overflowed. In one example, thefuse elements 26 include indium, tin, gallium, or alloys thereof. Thefuse elements 26 may be formed utilizing conventional techniquesincluding deposition that are well known to those skilled in the art.Each fuse element 26 can be provided to the vertically stackedsolid-state thin-film battery structure of FIG. 3 by depositing andetching a metal or metal alloy that provides the fuse elements 26. Thefuse elements 26 are typically formed prior to the stacking process.

In some embodiments (not shown in this embodiment), each fuse element 26can be located in a dielectric material (not shown). In someembodiments, the dielectric material that encases each fuse element 26may be a porous dielectric material such as, for example, porous carbon.In some embodiments (also not shown), the vertically stacked solid-statethin-film battery structure can be located within an air and/or moistureimpermeable structure. The air and/or moisture impermeable structureincludes any air and/or moisture impermeable material or multilayeredstack of such materials. Examples of air and/or moisture impermeablematerials that can be employed in the present application include, butare not limited to, parylene, a fluoropolymer, silicon nitride, and/orsilicon dioxide. The air and/or moisture impermeable structure may beformed depositing the air and/or moisture impermeable material.

The load 28 that can be used in the present application includes asource (i.e., charging element) that can provide a voltage to theexemplary structure shown in FIG. 4. The voltage that can be used inexemplary structure shown in FIG. 4 may vary. In one example, thevoltage can be from 2 volts to 5 volts. The load 28 may be used tocharge/recharge the exemplary vertical stacked solid-state batterystructure shown in FIG. 4.

Notably, FIG. 4 shows a solid-state battery structure in accordance withthe present application. In this embodiment, the solid-state batterystructure includes a plurality of solid-state thin-film batterysub-sheets (10P, 12P) vertically stacked one atop the other. A pluralityof fuse elements 26 is located in proximity to the plurality ofsolid-state thin-film battery sub-sheets (10P, 12P). Each solid-statethin-film battery sub-sheet (10P, 12P) of the plurality of solid-statethin-film battery sub-sheets is connected to one fuse element 26, andthe fuse elements 26 of the plurality of fuse elements are configured tobe in parallel with one another. A load 28 is present which has a firstconnection to the parallel arrangement of fuse elements 26, and a secondconnection to the various solid-state thin-film battery structuresportions 12P.

Referring now to FIG. 5A, there is illustrated an array layout for asolid-state battery structure of the present application which containsa plurality of solid-state thin-film batteries. In this embodiment, thesolid-state battery structure includes an array of solid-state thin-filmbatteries located on a surface of a substrate 10, each solid-statethin-film battery of the array of solid-state thin-film batteriescomprises a bottom electrode 14 (as defined above), a battery cellmaterial stack 13 (as defined above), and a top electrode 24 (as definedabove). The battery cell material stack 13 includes the cathode layer16, the solid-state electrolyte layer 18, the optional liner 20, and theanode region 22 as defined above. In some embodiments (and as shown inFIG. 5A), the top electrode 24 may have sidewall surfaces that arenon-vertically aligned with the sidewall surfaces of the underlyingbattery cell material stack 13. In other embodiments, the top electrode24 may have sidewall surfaces that are vertically aligned with thesidewall surfaces of the underlying battery cell material stack 13.

In one embodiment, each solid-state thin-film battery structure of thearray shown in FIG. 5A may be formed utilizing a lift-off process suchas disclosed in co-pending and co-assigned U.S. patent application Ser.No. 15/474,570, filed Mar. 30, 2017, the entire content of which isincorporated herein by reference. In another embodiment, eachsolid-state thin-film battery structure can be formed utilizing anon-lift off process. In such an embodiment, each solid-state thin-filmbattery structure can be formed by deposition of the various batterylayers and thereafter subjecting the same to a patterning step such as,for example, lithography and etching.

The exemplary solid-state battery structure shown in FIG. 5A alsoincludes a plurality of fuse elements 26 (as defined above). Each fuseelement 26 of the plurality of fuse elements has a first end connectedto the bottom electrode 14 of one of the solid-state thin-film batteriesand a second end connected to a first bus bar 32. Each fuse element 26may be formed as described above and may be encased in dielectricmaterial 30.

In some embodiments, the dielectric material 30 that encases each fuseelement 26 may be a porous dielectric material such as, for example,porous carbon. The dielectric material 30 may be formed utilizingdeposition and etching.

The solid-state battery structure of FIG. 5A also includes first busbars 32 located on the surface of substrate 10, and at least one secondbus bar 36 is located above, and spaced apart from, each first bus bar32, wherein the at least one second bus bar 36 contacts a surface of thetop electrode 24 of each solid-state thin-film battery. In someembodiments, a single second bus bar 36 is employed and is present onthe entirety of the structure. In other embodiments, a plurality ofspaced apart second bus bars 36 is employed. Each first bus bar 32 andeach second bus bar 36 includes a contact metal or metal alloy.Illustrative examples of contact metals or metal alloys that may beemployed for the first and second bus bars (32, 36) include, tungsten,copper, aluminum, or copper-aluminum alloys. The first bus bars 32 maybe formed by deposition and etching, the at least one second bus bar 36may be formed by deposition. A patterning process may also be used inproviding multiple second bus bars 36. As is shown in the top down viewof FIG. 5B the fuse elements 26 are configured in parallel to eachother.

Prior to forming the at least one second bus bar 36, a dielectricstructure 34 is formed surrounding each solid-state thin-film battery,each fuse element 26, each dielectric material 30, and each first busbar 32. Dielectric structure 34 may include any air and/or moistureimpermeable material or multilayered stack of such materials. Examplesof air and/or moisture impermeable materials that can be employed in thepresent application include, but are not limited to, parylene, afluoropolymer, silicon nitride, and/or silicon dioxide. The dielectricstructure 34 may be formed by first depositing the air and/or moistureimpermeable material and thereafter a planarization process can be usedto provide a topmost surface that is coplanar with a topmost surface ofeach top electrode 24.

In some embodiments and additional arrays of solid-state thin-filmbatteries can be stacked one atop the other. Each level can be formedutilizing the materials and technique mentioned above in providing thestructure shown in FIG. 5A. In one example and as shown in FIG. 6, asolid-state battery structure is provided that includes a first batterylevel L1 comprising an array of solid-state thin-film batteries (14, 13,24) located on a surface of a substrate 10 and a fuse element 26 inproximity to each solid-state thin-film battery of the plurality ofsolid-state thin-film batteries. The fuse elements 26 are encased indielectric material 30 as defined above. Each fuse element 26 in thefirst battery level L1 has a first end connected to a bottom electrode14 of one of the solid-state thin-film batteries in the first batterylevel L1 and a second end connected to a first bus bar 32 in the firstbattery level L1. The first bus bars 32 in the first battery level arelocated on the substrate 10. A dielectric structure 34 as defined aboveis also present in the first battery level L1. At least one second busbar 36 is located above, and spaced apart from, each first bus bar 32 inthe first battery level L1, wherein the at least one second bus bar 36contacts a surface of a top electrode 24 of each solid-state thin-filmbattery in the first battery level L1. A second battery level L2comprising an array of solid-state thin-film batteries (14, 13, 24) islocated above the at least one second bus bar 36 that is present atopthe first battery level. The second level L2 does not include anydielectric material 30 and fuse elements 32. In the present application,the top electrode 24 of the solid-state thin-film batteries in the firstbattery level L1 are the same type (i.e., anode-side electrode orcathode side-electrode) as the bottom electrode 14 of the solid-statethin-film batteries in the second battery level L2.

In some embodiments, a third battery level L3 is formed atop the secondbattery level L2. In such an embodiment, the third battery level L3comprises an array of solid-state thin-film (14, 13, 24) batteries and afuse element 26 in proximity to each solid-state thin-film battery ofthe plurality of solid-state thin-film batteries in the third batterylevel L3. Each fuse element 26 in the third battery level has a firstend connected to a bottom electrode 14 of one of the solid-statethin-film batteries in the third battery level L3 and a second endconnected to a first bus bar 32 in the third battery level L3. The fuseelements 26 in the third battery level are encased in dielectricmaterial 30, and the third level also includes dielectric structure 34.At least one second bus bar 36 is located on the third battery level L3.In accordance with the present application, each bottom electrode 14 ofthe plurality of solid-state thin-film batteries present in the thirdbattery level L3 is in direct connect with one of the top electrodes 24within the second battery level L2, and the bottom electrodes 14 of theplurality of solid-state thin-film batteries present in the thirdbattery level L3 are of the same type (i.e., cathode-side or anode-side)as the top electrodes 24 of the plurality of solid-state thin-filmbatteries present in the second battery level L2. A fourth battery levelL4 that is the same as the second battery level L2 can be formed atopthe third battery level L3, and a fifth battery level L5 that is thesame as the first and third battery levels (L1 and L3) can be formedatop the fourth battery level. A second bus bar 36 can be formed ontothe fifth battery level L5. Additional battery levels can be formed atopthe structure shown in FIG. 6 implying the same repetition of differentbattery levels.

Referring now to FIG. 7, there is shown a yet other solid-state batterystructure in accordance with the present application. In thisembodiment, the solid-state battery structure includes a plurality ofsubstrate layers 10 (as defined above) and dielectric material layers 35stacked one atop the other, wherein each dielectric material layer 35includes a solid-state thin-film battery located therein, wherein eachsolid-state thin-film battery comprises at least a bottom electrode 14(as defined above), a cathode (not shown), a solid-state electrolyte(not shown), and a top electrode 24 (as defined above). A firstvia-filled contact structure 50 interconnects each bottom electrodetogether 14, and a second via-filled contact structure 52 interconnectseach top electrode 24 together. Each solid-state thin-film battery mayinclude an anode region and an optional liner. For clarity, the cathode,the solid-state electrolyte, optional liner and anode region are notshown in the drawing.

The structure can be formed by first forming a plurality of structuresincluding at least one solid-state thin-film battery (including one ofthe lithium-based batteries defined above) located on a surface ofsubstrate 10. Dielectric material 35 layers which includes any airand/or moisture impermeable material or multilayered stack of suchmaterials is then formed surrounding the at least one solid-statethin-film battery. Examples of air and/or moisture impermeable materialsthat can be employed in the present application include, but are notlimited to, parylene, a fluoropolymer, silicon nitride, and/or silicondioxide. The dielectric material layer 35 may be formed by firstdepositing the air and/or moisture impermeable material and thereafter aplanarization process can be used to provide a topmost surface that iscoplanar with a topmost surface of each top electrode 24. Each structureis then stacked one atop the other, and then contact openings are formedtherein. The contact openings are then filled with a contact metal ormetal alloy as defined above and then a planarization process isemployed to provide the structure shown in FIG. 7.

Referring now to FIG. 8, there is illustrated yet further solid-statebattery structure of the present application. The exemplary solid-statebattery structure of FIG. 8 includes at least one fin structure 10F(three fin structures are shown by way of one example) extending upwardsfrom base substrate 10B. A solid-state thin-film battery structure islocated on physically exposed surfaces of the at least one fin structure10F and on physically exposed surfaces of the base substrate 10B. Thesolid-state thin-film battery structure includes a bottom electrode 14(as defined above), a battery cell material stack 13 (as defined above),and a top electrode 24 (as defined above).

The exemplary solid-state battery structure of FIG. 8 can be formed byfirst providing a substrate (as defined above). The substrate can thenbe patterned to define the fin structures 10F and the base substrate10B. In such an embodiment, the fin structures 10F and the basesubstrate 10B are of unitary construction and comprise a same material.In other embodiments, a base substrate which includes one of thematerials mentioned above for substrate 10 is provided. A dielectricstructure having openings that expose the base substrate is thenprovided, and the fin structures are thereafter grown from thephysically exposed surface of the base substrate 10 utilizing aconventional epitaxial growth process. The dielectric structure is thenremoved, and thereafter the various components of the solid-statethin-film battery structure are deposited. Following the deposition ofeach component, the deposited layer may be lithographically patterned toprovide the exemplary solid-state battery structure shown in FIG. 8.

The exemplary solid-state battery structures of the present application(and as shown in FIGS. 4, 5A, 6, 7 and 8) have a fast charge rate C,wherein C is the total charge capacity/hr. By “fast charge rate C” it ismeant a charge rate of 3 C or greater. In some embodiments and in whichno lithium anode is intentionally deposited in the battery cell materialstack, the charging process may include the charging process disclosedin co-pending and co-assigned U.S. patent application Ser. No.15/474,640, filed on Mar. 30, 2017; the entire content of which isincorporated herein by reference. In such an embodiment, chargingincludes at least an initial charge stage in which a charge rate of 5 Cor greater is performed for a period of time of 50 seconds or less.Further charging at or below the charge rate of 5 C may follow theinitial charge stage.

While the present application has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present application. It is therefore intended that the presentapplication not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

What is claimed is:
 1. A solid-state battery structure comprising: aplurality of fin structures extending upward from a base substrate,wherein each fin structure of the plurality of fin structures and thebase substrate are of unitary construction and comprise a samesemiconductor material; and a solid-state thin-film battery structurelocated on physically exposed surfaces of the plurality of finstructures and on the base substrate, wherein the solid-state thin-filmbattery structure comprises a bottom electrode, a battery cell materialstack, and a top electrode, wherein an end segment of each of the bottomelectrode, the battery cell material stack and the top electrode whichis adjacent to an outermost fin structure of the plurality of finstructures is in direct physical contact with a topmost surface of thebase substrate, the battery material stack that is located betweenneighboring fin structures of the plurality of fin structures has abottommost surface that directly contacts a horizontal surface of thebottom electrode that is located between the neighboring fin structuresof the plurality of fin structures, and wherein an outermost sidewall ofthe top electrode that is located adjacent to the outermost finstructure of the plurality of fin structures is physically exposed. 2.The solid-state battery structure of claim 1, wherein the solid-statethin-film battery structure further comprising an anode region locatedbetween the solid-state electrolyte and the top electrode.
 3. Thesolid-state battery structure of claim 2, wherein the solid-statethin-film battery structure is a lithium-based battery.
 4. Thesolid-state battery structure of claim 3, wherein the cathode iscomposed of a lithium-based mixed oxide.
 5. The solid-state batterystructure of claim 3, wherein the solid-state electrolyte is composed ofa material that enables the conduction of lithium ions.
 6. Thesolid-state battery structure of claim 5, wherein the material of thesolid-state electrolyte is lithium phosphorus oxynitride (LiPON) orlithium phosphosilicate oxynitride (LiSiPON).
 7. The solid-state batteryof claim 3, further comprising a lithium nucleation enhancement linerlocated between the solid-state electrolyte and the anode region.
 8. Thesolid-state battery of claim 7, wherein the lithium nucleationenhancement liner is composed of gold (Au), silver (Ag), zinc (Zn),magnesium (Mg), tantalum (Ta), tungsten (W), molybdenum (Mo), atitanium-zirconium-molybdenum alloy (TZM), or silicon (Si).
 9. Thesolid-state battery structure of claim 2, wherein the anode region iscomposed of a plurality of lithium regions.
 10. The solid-state batterystructure of claim 2, wherein the anode region comprises a lithium iongenerator or lithium intercalation active material.
 11. The solid-statebattery structure of claim 1, wherein an entirety of each of the endsegments is coplanar with a bottommost surface of each fin structure ofthe plurality of fin structures.
 12. The solid-state battery structureof claim 1, wherein an entirety of each fin structure of the pluralityof fin structures is located above the topmost surface of the basesubstrate.
 13. A solid-state battery structure comprising: a pluralityof fin structures extending upward from a base substrate; and asolid-state thin-film battery structure located on physically exposedsurfaces of the plurality of fin structures and on the base substrate,wherein the solid-state thin-film battery structure comprises a bottomelectrode, a battery cell material stack, and a top electrode, andwherein an end segment of each of the bottom electrode, the battery cellmaterial stack and the top electrode which is adjacent to an outermostfin structure of the plurality of fin structures is in direct physicalcontact with a topmost surface of the base substrate and wherein theentirety of each of the end segments is coplanar with a bottommostsurface of the at least one fin structure, and wherein the batterymaterial stack that is located between neighboring fin structures of theplurality of fin structures has a bottommost surface that directlycontacts a horizontal surface of the bottom electrode that is locatedbetween the neighboring fin structures of the plurality of finstructures.